Laser annealing method and device

ABSTRACT

A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

This is a National Phase Application in the United States ofInternational Patent Application No. PCT/JP2006/318006 filed Sep. 12,2006, which claims priority on Japanese Patent Application No.266607/2005, filed Sep. 14, 2005, and Japanese Patent Application No.027096/2006, filed Feb. 3, 2006. The entire disclosures of the abovepatent applications are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Technical Field of the Invention

The present invention relates to a technique of reforming amorphoussemiconductor film such as a silicon film into a polycrystalline ormonocrystalline semiconductor film by irradiating a rectangular laserbeam onto the amorphous semiconductor film on a substrate in fabricatinga semiconductor device, and a technique of improving the quality of apolycrystalline or monocrystalline semiconductor film by irradiating arectangular laser beam onto the polycrystalline or monocrystallinesemiconductor film on a substrate. As an original polycrystalline ormonocrystalline semiconductor film whose quality is to be improved,there is a film prepared by solid-phase growth or a film prepared bylaser annealing. Improvement of the quality of a polycrystalline ormonocrystalline semiconductor film means (1) increasing the size ofcrystal grains, (2) decreasing defects in crystal grains, and (3)crystallization of an amorphous portion remaining among crystal grains.

2. Description of the Related Art

In a case where a thin film transistor (hereinafter called “TFT”) isformed on a substrate in fabrication of a semiconductor device, the useof an amorphous semiconductor film, such as an amorphous silicon film,as a semiconductor layer where TFTs are to be formed cannot achieve afast operation due to a lower mobility of carriers. In this respect, anamorphous silicon film is usually transformed into a polycrystalline ormonocrystalline silicon film crystallized by laser annealing.

To transform an amorphous silicon film into a polycrystalline ormonocrystalline silicon film by laser annealing, a laser beam whosecross section perpendicular to the advancing direction is a rectangle(hereinafter called “rectangular laser beam”) is often used. Arectangular laser beam is irradiated on an amorphous silicon film whilemoving the substrate having the amorphous silicon film formed thereon ina short-side direction of the rectangle. A method of forming apolycrystalline or monocrystalline silicon film with a rectangular laserbeam is disclosed in Patent Document 1 described below, for example.

Non-patent Documents 2 and 3 described below show techniques relevant tothe present invention. Those documents describe that when a polarizedlaser beam is irradiated onto a solid surface, a surface electromagneticwave is excited on the solid surface and interference of the surfaceelectromagnetic wave with the incident laser beam generates a standingwave on the solid surface, thereby forming a micro periodic structure onthe solid surface.

[Patent Document 1]

Japanese Laid-Open Patent Publication No. 2003-347210 “SEMICONDUCTORDEVICE AND FABRICATION METHOD THEREFOR”

[Non-patent Document 1]

www.nml.co.jp/new-business/SUB2/investigation/ripples/texture.pdf

[Non-patent Document 2]

Laser Study December 2000, Vol. 28, No. 12, pp. 824-828 “Incident-AngleDependency of Laser-induced Surface Ripples on Metals andSemiconductors”

[Non-patent Document 3]

pp. 1384-1401,IEE JOURNAL OF QUANTUM ELECTRONICS. VOL. QE-22, NO. 8,AUGUST, 1986

In a process of forming polycrystalline or monocrystalline silicon byirradiation of a rectangular laser beam, the direction of growth ofcrystal grains is greatly affected by temperature gradient or energygradient of the laser beam. As shown in FIGS. 1A, 1B and 1C, the energyof the rectangular laser beam in the long-side direction is constant, sothat a nucleus is generated at a random position relative to thelong-side direction. This results in growth of the nucleus to a randomsize.

The energy distribution of rectangular laser beam in the short-sidedirection has a large gradient as shown in FIG. 2. Because the crystalgrowth is extremely sensitive to the energy distribution in theshort-side direction, therefore, it is very difficult to make thecrystal size in the short-side direction uniform. As a result, avariation in crystal size in the short-side direction becomes greaterthan a variation in crystal size in the long-side direction as shown inFIG. 3.

As apparent from the above, conventionally, a polycrystalline ormonocrystalline silicon film having crystal grains with an nonuniformsize is formed. Accordingly, when TFTs are formed on the polycrystallineor monocrystalline silicon film, the performance of the TFTs varies dueto a difference in the number of crystal grains in the channel portionper unit length. As the size of crystal grains greatly differs betweenthe short-side direction and the long-side direction, the performance ofTFTs greatly differs between the short-side direction and the long-sidedirection. This is because the performance of TFTs becomes lower byincrease in the number of times a carrier moving the channel portionencounter the crystal grain boundary.

SUMMARY OF THE INVENTION

It is therefore a first object of the invention to provide a laserannealing method capable of acquiring a polycrystalline ormonocrystalline semiconductor film comprising crystal grains with auniform size in a long-side direction.

It is a second object of the invention to provide a laser annealingmethod and device capable of acquiring a polycrystalline ormonocrystalline semiconductor film comprising crystal grains with auniform size in a short-side direction.

It is a third object of the invention to provide a laser annealingmethod and device capable of acquiring a polycrystalline ormonocrystalline semiconductor film comprising crystal grains with auniform size between a long-side direction and a short-side direction.

To achieve the first object, according to the present invention, thereis provided a laser annealing method for executing laser annealing byirradiating a semiconductor film formed on a surface of a substrate witha laser beam, the method including the steps of:

generating a linearly polarized rectangular laser beam whose crosssection perpendicular to an advancing direction is a rectangle with anelectric field directed toward a long-side direction of the rectangle oran elliptically polarized rectangular laser beam having a major axisdirected toward a long-side direction;

causing the rectangular laser beam to be introduced to the surface ofthe substrate; and

setting a wavelength of the rectangular laser beam to a length which isabout a desired size of a crystal grain in a standing wave direction(claim 1).

According to the method, a standing wave is generated on the surface ofthe semiconductor film by scattered light of an introduced incidentrectangular laser beam at the surface of the semiconductor film and theintroduced incident rectangular laser beam, making it possible to form apolycrystalline or monocrystalline semiconductor film comprised ofcrystals with a uniform size in the direction of the standing wave.

That is, a standing wave is generated on the semiconductor film in thelong-side direction which is a polarization direction, thus producingthe periodic energy of the standing wave or a temperature gradientcorresponding thereto. When laser annealing is performed on an amorphoussemiconductor film by this method, therefore, nucleuses are generated attroughs of the periodic energy, so that the individual nucleuses grow ina direction of a higher temperature and those portions where thenucleuses collide with one another become crystal grain boundaries. Asnucleuses generated at periodic positions are grown by the influence ofthe same temperature gradient in the long-side direction, therefore, itis possible to form a polycrystalline or monocrystalline semiconductorfilm comprising crystal grains with a uniform size in the long-sidedirection. When laser annealing is performed on a polycrystalline ormonocrystalline semiconductor film by this method, the crystal is grownby the influence of the periodic temperature gradient in the long-sidedirection, thus improving the quality of a polycrystalline ormonocrystalline semiconductor film such that the sizes of crystal grainsin the long-side direction become uniform. Further, a desired crystalgrain size in the long-side direction can be acquired by selecting thewavelength of the rectangular laser beam.

To achieve the second object, according to the present invention, thereis provided a laser annealing method for executing laser annealing byirradiating a semiconductor film formed on a surface of a substrate witha laser beam, the method including the steps of:

generating a linearly polarized rectangular laser beam whose crosssection perpendicular to an advancing direction is a rectangle with anelectric field directed toward a short-side direction of the rectangleor an elliptically polarized rectangular laser beam having a major axisdirected toward a short-side direction; and

causing the rectangular laser beam to be introduced to the substrate(claim 2).

To achieve the second object, according to the present invention, thereis provided a laser annealing device which executes laser annealing byirradiating a semiconductor film formed on a surface of a substrate witha laser beam, including:

short-side polarized beam generating means that generates a linearlypolarized rectangular laser beam whose cross section perpendicular to anadvancing direction is a rectangle with an electric field directedtoward a short-side direction of the rectangle or an ellipticallypolarized rectangular laser beam having a major axis directed toward ashort-side direction, and causes the rectangular laser beam to beintroduced to a surface of the semiconductor film (claim 6).

According to the method and device, a standing wave is generated on thesurface of the semiconductor film by scattered light of an introducedincident rectangular laser beam at the surface of the semiconductor filmand the introduced incident rectangular laser beam, making it possibleto form a polycrystalline or monocrystalline semiconductor filmcomprised of crystals with a uniform size in the direction of thestanding wave.

That is, a standing wave is generated on the semiconductor film in theshort-side direction which is a polarization direction or a standingwave is intensely generated in the major axial direction of ellipticallypolarized light, thus producing the periodic energy of the standing waveor a temperature gradient corresponding thereto. When laser annealing isperformed on an amorphous semiconductor film by this method and device,therefore, nucleuses are generated at troughs of the periodic energy, sothat the individual nucleuses grow in a direction of a highertemperature and those portions where the nucleuses collide with oneanother become crystal grain boundaries. As nucleuses generated atperiodic positions are grown by the influence of the same temperaturegradient in the short-side direction, therefore, it is possible to forma polycrystalline or monocrystalline semiconductor film comprisingcrystal grains with a uniform size in the short-side direction. Whenlaser annealing is performed on a polycrystalline or monocrystallinesemiconductor film by this method and device, the crystal is grown bythe influence of the periodic temperature gradient in the short-sidedirection, thus improving the quality of a polycrystalline ormonocrystalline semiconductor film such that the sizes of crystal grainsin the short-side direction become uniform.

According to a preferred embodiment of the present invention, the methodincludes a step of irradiating a surface of the semiconductor film onthe substrate with the rectangular laser beam while transferring thesubstrate in a direction perpendicular to a long side of the rectangularlaser beam,

wherein an incident angle of the rectangular laser beam to thesemiconductor film is adjusted in such that the incident angle isincreased in a transfer direction of the substrate or a directionopposite to the transfer direction of the substrate (claim 3).

The crystal grain size in the short-side direction increases as theincident angle is increased in the transfer direction of the substrate,whereas the crystal grain size in the short-side direction decreases asthe incident angle is increased in the opposite direction to thetransfer direction of the substrate.

Therefore, adjusting the incident angle can adjust the crystal grainsize in the short-side direction. For example, the crystal grain size inthe short-side direction can be made about the same as the size ofcrystal grains formed in the long-side direction by adjusting theincident angle.

To achieve the third object, according to the present invention, thereis provided a laser annealing method for executing laser annealing byirradiating a semiconductor film formed on a surface of a substrate witha laser beam, the method including the steps of:

generating a polarized rectangular laser beam whose cross sectionperpendicular to an advancing direction is a rectangle with an electricfield whose direction is alternately changed to a long-side directionand a short-side direction of the rectangle; and

causing the rectangular laser beam to be introduced to the surface ofthe substrate (claim 4).

To achieve the third object, according to the present invention, thereis provided a laser annealing device which executes laser annealing byirradiating a semiconductor film formed on a surface of a substrate witha laser beam, including:

a first laser oscillator and a second laser oscillator that output laserbeams;

a pulse controller that controls the first and second laser oscillatorsso as to make laser pulse output timings of the first and second laseroscillators different from each other;

first polarization means that transforms the laser beam from the firstlaser oscillator to linearly polarized light;

second polarization means that transforms the laser beam from the secondlaser oscillator to linearly polarized light;

beam combining means that combines the laser beam from the first laseroscillator and the laser beam from the second laser oscillator; and

rectangular beam generating means that turns a laser beam from the beamcombining means to a rectangular laser beam whose cross sectionperpendicular to an advancing direction is a rectangle,

wherein the first polarization means polarizes the laser beam in along-side direction of the rectangle, and the second polarization meanspolarizes the laser beam in a short-side direction of the rectangle(claim 8).

According to the method and device, standing waves directedperpendicular to each other, which is caused by scattered light of anintroduced incident rectangular laser beam at the surface of thesemiconductor film and the introduced incident rectangular laser beam,are alternately generated on the surface of the semiconductor film,making it possible to form a polycrystalline or monocrystallinesemiconductor film comprised of crystals with a uniform size in thedirection of each standing wave.

That is, standing waves are alternately generated on the semiconductorfilm in the long-side direction and the short-side direction which arepolarization directions, thus producing the periodic energy of thestanding wave or a temperature gradient corresponding thereto. Whenlaser annealing is performed on an amorphous semiconductor film by thismethod and device, therefore, nucleuses are generated at troughs of theperiodic energy, so that the individual nucleuses grow in directions ofa higher temperature and those portions where the nucleuses collide withone another become crystal grain boundaries. As nucleuses generated atperiodic positions are grown by the influence of the same temperaturegradients in the long-side direction and the short-side direction,therefore, it is possible to form a polycrystalline or monocrystallinesemiconductor film comprising crystal grains with uniform sizes in thelong-side direction and the short-side direction. When laser annealingis performed on a polycrystalline or monocrystalline semiconductor filmby this method and device, the crystal is grown by the influence of theperiodic temperature gradient in the long-side direction and theshort-side direction, thus improving the quality of a polycrystalline ormonocrystalline semiconductor film such that the sizes of crystal grainsin the long-side direction and the short-side direction become uniform.

According to a preferred embodiment of the present invention, an energydensity of the rectangular laser beam or a short-side width of therectangular laser beam is adjusted to adjust a size of a crystal grainof a polycrystalline or monocrystalline semiconductor film to be formed(claim 5).

Accordingly, finer adjustment of the crystal grain size is possible, sothat a polycrystalline or monocrystalline semiconductor film comprisingmore uniform crystal grains can be formed.

To achieve the third object, according to the present invention, thereis provided a laser annealing method for executing laser annealing byirradiating a semiconductor film formed on a surface of a substrate witha laser beam, the method including the steps of:

generating a first laser beam linearly polarized;

generating a second laser beam linearly polarized;

combining the first laser beam and the second laser beam in such that apolarization direction of the first laser beam and a polarizationdirection of the second laser beam become perpendicular to each other;

turning the combined laser beam to a rectangular laser beam whose crosssection perpendicular to an advancing direction is a rectangle; and

causing the rectangular laser beam to be introduced to the surface ofthe substrate (claim 9).

Further, to achieve the third object, according to the presentinvention, there is provided a laser annealing device which executeslaser annealing by irradiating a semiconductor film formed on a surfaceof a substrate with a laser beam, including:

a first laser oscillator and a second laser oscillator that output laserbeams;

beam combining means that combines the laser beam from the first laseroscillator and the laser beam from the second laser oscillator; and

rectangular beam generating means that turns a laser beam from the beamcombining means to a rectangular laser beam whose cross sectionperpendicular to an advancing direction is a rectangle, and causing therectangular laser beam to be introduced onto the substrate,

the laser beams from the first and second laser oscillators beinglinearly polarized,

a polarization direction of the laser beam from the first laseroscillator and a polarization direction of the laser beam from thesecond laser oscillator being perpendicular to each other at a positionof incidence to the substrate (claim 12).

According to the method and device, standing waves directedperpendicular to each other, which caused by scattered light of anintroduced incident rectangular laser beam at the surface of thesemiconductor film and the introduced incident rectangular laser beam,are generated on the surface of the semiconductor film, making itpossible to form a polycrystalline or monocrystalline semiconductor filmcomprised of crystals with a uniform size in the direction of eachstanding wave.

That is, standing waves are generated on the semiconductor film inpolarization directions perpendicular to each other, thus producing theperiodic energy of the standing wave or a temperature gradientcorresponding thereto.

When laser annealing is performed on an amorphous semiconductor film bythis method and device, therefore, nucleuses are generated at troughs ofthe periodic energy, so that the individual nucleuses grow in directionsof a higher temperature and those portions where the nucleuses collidewith one another become crystal grain boundaries. As nucleuses generatedat periodic positions are grown by the influence of the same temperaturegradients produced in directions perpendicular to each other, therefore,it is possible to form a polycrystalline or monocrystallinesemiconductor film comprising crystal grains with uniform sizes in thedirections perpendicular to each other. As a result, the crystal grainsizes become uniform between the long-side direction and the short-sidedirection.

Even when laser annealing is performed on a polycrystalline ormonocrystalline semiconductor film by this method and device, thecrystal is grown uniformly by the influence of the periodic temperaturegradient in the directions perpendicular to each other, resulting in animprovement of the quality of a polycrystalline or monocrystallinesemiconductor film such that the sizes of crystal grains in thelong-side direction and the short-side direction become uniform.

To achieve the third object, according to the present invention, thereis provided a laser annealing method for executing laser annealing byirradiating a semiconductor film formed on a surface of a substrate witha laser beam, the method including the steps of:

generating a circularly polarized rectangular laser beam whose crosssection perpendicular to an advancing direction is a rectangle; and

causing the rectangular laser beam to be introduced to the surface ofthe substrate (claim 10).

Further, to achieve the third object, according to the presentinvention, there is provided a laser annealing device which executeslaser annealing by irradiating a semiconductor film formed on a surfaceof a substrate with a laser beam, including:

circularly polarized beam generating means that generates a circularlypolarized rectangular laser beam whose cross section perpendicular to anadvancing direction is a rectangle, and causes the rectangular laserbeam to be introduced to a surface of the semiconductor film (Claim 13).

According to the method and device, a standing wave is generated on thesurface of the semiconductor film in the polarization direction byscattered light of an introduced incident rectangular laser beam at thesurface of the semiconductor film and the introduced incidentrectangular laser beam. Because a rectangular laser beam is a circularlypolarized beam, the standing wave takes a circular motion on a planeperpendicular to the advancing direction of light. Accordingly, theperiodic energy of the standing wave or a temperature gradientcorresponding thereto is produced uniformly in every direction on thesurface of the semiconductor film.

When laser annealing is performed on an amorphous semiconductor film bythis method and device, therefore, nucleuses are generated at troughs ofthe periodic energy, so that the individual nucleuses grow in adirection of a higher temperature and those portions where the nucleusescollide with one another become crystal grain boundaries. As nucleusesgenerated at periodic positions are grown by the influence of theperiodic temperature gradients produced uniformly in every direction,therefore, it is possible to form a polycrystalline or monocrystallinesemiconductor film comprising crystal grains with a uniform size inevery direction. As a result, the crystal grain sizes become uniformbetween the long-side direction and the short-side direction.

Even when laser annealing is performed on a polycrystalline ormonocrystalline semiconductor film by this method and device, thecrystal is grown uniformly by the influence of the periodic temperaturegradient produced in every direction, resulting in an improvement of thequality of a polycrystalline or monocrystalline semiconductor film suchthat the sizes of crystal grains in the long-side direction and theshort-side direction become uniform.

To achieve the third object, according to the present invention, thereis provided a laser annealing method for executing laser annealing byirradiating a semiconductor film formed on a surface of a substrate witha laser beam, the method including the steps of:

generating a linearly polarized laser beam;

turning the linearly polarized laser beam to unpolarized light;

turning the unpolarized laser beam to a rectangular laser beam whosecross section perpendicular to an advancing direction is a rectangle;and

causing the rectangular laser beam to be introduced to the surface ofthe substrate (claim 11).

Further, to achieve the third object, according to the presentinvention, there is provided a laser annealing device which executeslaser annealing by irradiating a semiconductor film formed on a surfaceof a substrate with a laser beam, including:

a laser oscillator that outputs a linearly polarized laser beam;

unpolarization means that turns the laser beam from the laser oscillatorto unpolarized light; and

rectangular beam generating means that turns the laser beam from theunpolarization means to a rectangular laser beam whose cross sectionperpendicular to an advancing direction is a rectangle, and causes therectangular laser beam to be introduced onto the substrate (claim 14).

While a laser beam output from a laser oscillator is often linearlypolarized, the linearly polarized laser beam is turned into unpolarizedlight to be introduced to the substrate according to the method anddevice, a standing wave is not produced on the surface of thesemiconductor film on the substrate.

When laser annealing is performed on the semiconductor film on thesubstrate by this method and device, therefore, crystal grains aregenerated at random positions, and, what is more, the crystal grainsgrow in a random direction, thereby suppressing an increase in the sizesof crystal grains only in a specific direction. As a result, the sizesof the crystal grains of the semiconductor film are generally madeuniform, making the crystal grain size uniform between the long-sidedirection and the short-side direction.

Even when laser annealing is performed on a polycrystalline ormonocrystalline semiconductor film by this method and device, thecrystal grains grow in a random direction, thereby suppressing anincrease in the sizes of crystal grains only in a specific direction. Asa result, the sizes of the crystal grains of the semiconductor film aregenerally made uniform, so that the quality of the polycrystalline ormonocrystalline semiconductor film is improved so as to make the crystalgrain size uniform between the long-side direction and the short-sidedirection.

The other objects and advantages of the present invention will becomeapparent from the following description referring to the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, 1B and 1C show the conventional relationships between anenergy density on a substrate which is produced by irradiation of arectangular laser beam and the size of crystal grains to be formed.

FIG. 2 is a diagram showing an energy distribution in the long-sidedirection of a rectangular laser beam in a conventional art.

FIG. 3 is a diagram showing the size of crystal grains acquired by aconventional method.

FIG. 4 is a structural diagram of a long-side optical system provided ina laser annealing device according to a first embodiment of the presentinvention.

FIG. 5 is a structural diagram of a short-side optical system providedin a laser annealing device according to the first embodiment of thepresent invention.

FIGS. 6A and 6B show energy distributions in the long-side direction ofrectangular laser beams.

FIGS. 7A and 7B show energy distributions in the short-side direction ofrectangular laser beams.

FIG. 8 is an explanatory diagram of an operation of transferring asubstrate while irradiating a rectangular laser beam.

FIGS. 9A, 9B and 9C are diagrams showing the relationships between anenergy distribution in the long-side direction produced on the surfaceof a substrate by irradiation of a rectangular laser beam polarized inthe long-side direction, and the size of crystal grains to be formed.

FIG. 10 is a status diagram of the size of crystal grains acquiredexperimentally by irradiating a rectangular beam polarized in thelong-side direction.

FIG. 11 is a status diagram of the size of crystal grains acquiredexperimentally by irradiating a rectangular beam of a high energydensity polarized in the long-side direction.

FIGS. 12A, 12B and 12C are diagrams showing the relationships between anenergy distribution in the short-side direction produced on the surfaceof a substrate by irradiation of a rectangular laser beam polarized inthe short-side direction, and the size of crystal grains to be formed.

FIG. 13 is a diagram showing the size of crystal grains acquired byirradiation of a rectangular laser beam polarized in the short-sidedirection.

FIGS. 14A and 14B are explanatory diagrams of a case where a rectangularlaser beam polarized in the short-side direction is introducedobliquely.

FIG. 15 is a status diagram showing the size of crystal grains acquiredexperimentally by irradiation of a rectangular laser beam polarized inthe short-side direction.

FIG. 16 is a status diagram showing the size of crystal grains acquiredexperimentally by irradiation of a rectangular laser beam of a highenergy density polarized in the short-side direction.

FIG. 17 is a structural diagram of a laser annealing device according toa third embodiment to irradiate a substrate with a rectangular laserbeam whole alternately changing the polarization direction to thelong-side direction and the short-side direction.

FIGS. 18A and 18B are diagrams for explaining adjustment of thepolarization direction.

FIG. 19 is a structural diagram of a laser annealing device according toa fifth embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

First, the principle of the present invention will be described.

When a linearly polarized laser beam is introduced to a siliconsubstrate, a micro structure which periodically appears in thepolarization direction of the laser beam, i.e., in the vibrationdirection of an electric field, is formed. The period of the periodicmicro structure is about the wavelength of the laser beam introduced tothe silicon substrate.

This phenomenon will be described briefly (see Non-patent Documents 2and 3 for more details). A laser beam introduced to a solid from air isscattered by minute irregularity on the solid surface, causing a surfaceelectromagnetic wave to be excited between a solid medium and air. Theelectric field of the surface electromagnetic wave and the electricfield of the incident laser beam interfere with each other, generating astanding wave having a period of the wavelength or so of the laser beamon the solid surface. Ablation by the standing wave causes a periodicmicro structure to be formed at the solid surface.

The present invention performs a laser annealing process on asemiconductor film, such as a silicon film, using the periodic energydistribution of the standing wave generated by interference of thesurface electromagnetic wave with the incident laser beam. Morespecifically, a polycrystalline or monocrystalline semiconductor filmcomprising crystal grains grown to a uniform size is formed bycontrolling the growth of the crystal grains using the periodic energydistribution.

Preferred embodiments of the present invention will be described belowreferring to the accompanying drawings. Same reference numerals aregiven to common portions in the individual drawings to avoid redundantdescriptions.

First Embodiment

FIGS. 4 and 5 show the configuration of a laser annealing device whichperforms an annealing process on an amorphous silicon film on asubstrate 1, such as a semiconductor device. The laser annealing devicehas an optical system for generating a rectangular laser beam. Theoptical system comprises a long-side optical system 2 corresponding tothe long-side direction of the rectangular laser beam and a short-sideoptical system 4. FIG. 4 shows the structure of the long-side opticalsystem 2, and FIG. 5 shows the structure of the short-side opticalsystem 4. Same reference numerals in FIGS. 4 and 5 indicate opticalelements shared by the long-side optical system 2 and the short-sideoptical system 4.

As shown in FIGS. 4 and 5, the laser annealing device has a laseroscillator (not shown) which outputs a laser beam, a polarizer 5 whichlinearly polarizes the laser beam output from the laser oscillator, andan beam expander 7 which generates a rectangular laser beam whose crosssection perpendicular to an advancing direction is a rectangle. In thefollowing description, the long-side direction and the short-sidedirection of the rectangular cross section of the rectangular laser beamare simply called “long-side direction” and “short-side direction”,respectively.

The beam expander 7 expands the introduced laser beam in the long-sidedirection. The laser annealing device further has a cylindrical lensarray 9 to which the laser beam expanded in the long-side direction isintroduced.

The laser annealing device has a long-side condenser lens 11 whichadjusts the long-side directional length of the rectangular laser beamhaving passed the cylindrical lens array 9 in the long-side direction onthe substrate 1, and a short-side condenser lens 12 which condenses therectangular laser beam having passed the cylindrical lens array 9 withrespect to the short-side direction on the substrate 1.

FIG. 6A shows an energy distribution having a width A of a laser beam inthe long-side direction before passing the beam expander 7, and FIG. 6Bshows an energy distribution having a width A′ in the long-sidedirection at the time of irradiating an amorphous silicon film. FIG. 7Ashows an energy distribution having a width B of a laser beam in theshort-side direction before passing the beam expander 7, and FIG. 7Bshows an energy distribution having a width B′ in the short-sidedirection at the time of irradiating an amorphous silicon film. As shownin FIG. 6B, the energy of the rectangular laser beam at the time ofirradiation is substantially constant in the long-side direction.

According to a first embodiment, a laser beam is linearly polarized bythe polarizer 5 but the direction of polarization is in the long-sidedirection. That is, the electric field of the rectangular laser beam tobe irradiated onto an amorphous silicon film is directed in thelong-side direction. A laser beam may be linearly polarized by anothermethod, instead of the polarizer 5, such as reflecting the rectangularlaser beam at a glass surface or the like at a Brewster's angle to belinearly polarized.

The laser annealing device further has a transfer device (not shown)which transfers the substrate 1 which has an amorphous silicon filmformed on the surface thereof in an arrow direction in FIG. 8 at apredetermined speed when the rectangular laser beam is introduced to theamorphous silicon film by the long-side optical system 2 and theshort-side optical system 4. With the rectangular laser beam introducedto the surface of the semiconductor film, the transfer device transfersthe substrate in a direction perpendicular to the long-side direction sothat a desired range of the surface of the semiconductor film can beirradiated with the rectangular laser beam. The direction indicated bythe arrow in FIG. 8 is perpendicular to the long-side direction andcorresponds to the short-side direction. A direction in which the shortside of a rectangular laser beam is perpendicularly projected on thesurface of the substrate is also simply called “short-side direction”.The transfer device constitutes transfer means.

A rectangular laser beam may be generated to be irradiated on anamorphous silicon film by using other adequate optical systems.

As a rectangular laser beam polarized in the long-side direction isirradiated onto the amorphous silicon film on the substrate 1, aperiodic energy distribution is produced in the long-side direction incorrespondence to a standing wave on the amorphous silicon film. Thestanding wave is generated by interference of a surface electromagneticwave with the rectangular laser beam. The surface electromagnetic waveis excited by scattering of the incident rectangular laser beam atminute irregularity on the surface of the amorphous silicon film. FIG.9A shows the periodic energy distribution in the long-side directioncorresponding to the standing wave.

A periodic temperature distribution is produced at the amorphous siliconfilm in correspondence to the periodic energy distribution. Therefore,nucleuses of crystal grains are generated at locations which are cooledto the critical temperature of nucleus generation in the solidificationprocess of molten silicon. The nucleus generated locations are locationswith a lower temperature, and, specifically, are positions of troughs ofthe periodic energy distribution in FIG. 9A as shown in FIG. 9B. Fromthe nucleus generated locations, the nucleuses grow toward ahigher-temperature surrounding portion, so that the crystals collidewith each other to stop the growth. The crystal collision locations arecrystal grain boundaries. Consequently, crystal grains are produced atperiodic positions dependent on the energy distribution as shown in FIG.9C, making the size of the crystal grains in the long-side directionuniform.

With the rectangular laser being irradiated, the substrate 1 istransferred in the short-side direction to irradiate the entireamorphous silicon film with the rectangular laser beam. At this time,the energy distribution of the laser beam in the long-side directiondoes not change with time, so that crystals can be formed in the wholesilicon film at equal intervals in the long-side direction.

The energy period of the standing wave becomes about the wavelength ofthe rectangular laser beam. Therefore, the desired crystal grain size inthe long-side direction can be obtained by selecting the wavelength ofthe rectangular laser beam to be used in the irradiation.

The size of crystal grains to be formed can also be adjusted by changingthe energy density of the rectangular laser beam. FIG. 10 shows crystalgrains in polycrystalline or monocrystalline silicon acquired byirradiating a rectangular beam with a wavelength of 1 μm and an electricfield directed in the long-side direction onto an amorphous silicon filmat an energy density of 450 to 500 mJ/cm². FIG. 11 shows crystal grainsin polycrystalline or monocrystalline silicon acquired by irradiating arectangular beam with a wavelength of 1 μm and an electric fielddirected in the long-side direction onto an amorphous silicon film at anenergy density greater than 500 mJ/cm². The crystal grain size in thelong-side direction is about 1.0 μm in FIG. 10 while the crystal grainsize in the long-side direction is about 1.5 μm in FIG. 11. As apparentfrom the experimental results, as the energy density is increased,crystal grains with a size greater than the energy period of thestanding wave are acquired.

Effects similar to or the same as those mentioned above are alsoobtained by generating a rectangular laser beam from an ellipticallypolarized laser beam whose major axis is directed in the long-sidedirection instead of a linearly polarized laser beam.

Second Embodiment

A second embodiment of the present invention will be described next.

In the second embodiment, a laser annealing device is the same as thatof the first embodiment with a difference lying in that the polarizationdirection of the polarizer 5 linearly polarizes a laser beam output fromthe laser oscillator such that an electric field is directed in theshort-side direction, and then a rectangular laser beam is generated bythe beam expander 7. In this manner, a rectangular laser beam with anelectric field directed in the short-side direction is generated to beintroduced to an amorphous silicon film. The short-side polarized beamgenerating means is constituted by the laser oscillator which outputs alaser beam, and the long-side optical system 2 and the short-sideoptical system 4 which include the polarizer 5 polarizing the beam inthe short-side direction. In a case where the laser oscillator outputs alaser beam linearly polarized in the short-side direction, the polarizer5 can be omitted.

As shown in FIG. 8, with a rectangular laser beam being introduced ontothe amorphous silicon substrate 1, the substrate 1 is moved in theshort-side direction at a predetermined speed as in the firstembodiment. This allows the rectangular laser beam polarized in theshort-side direction to be irradiated onto the entire amorphous siliconfilm.

The rectangular laser beam introduced to the amorphous silicon film isscattered by minute irregularity on the amorphous silicon film, thusexciting a surface electromagnetic wave. The interference of the surfaceelectromagnetic wave with the introduced incident rectangular laser beamgenerates a standing wave at the surface of the amorphous silicon filmin the short-side direction. Therefore, the standing wave has a periodicenergy in the short-side direction. As mentioned above, the energydistribution of the introduced rectangular laser beam in the short-sidedirection becomes as shown in FIG. 7B. The periodic energy distributionof the standing wave is superimposed on the energy distribution of therectangular laser beam in the short-side direction to become an energydistribution on the amorphous silicon film. A curve represented by asolid line in FIG. 12A indicates the energy distribution of the standingwave combined with the energy distribution of the introduced rectangularlaser beam (a curve indicated by a broken line).

A temperature distribution corresponding to the energy distribution inFIG. 12A is produced in the short-side direction of silicon melted bythe energy distribution. As shown in FIG. 12B, crystal nucleuses areproduced at positions of troughs of the energy distribution. Thereafter,the crystal nucleuses grow toward locations with a higher temperature inthe short-side direction, and locations at which their crystals collideone another to stop the growth become crystal grain boundaries. As aresult, polycrystalline or monocrystalline silicon comprising crystalswith a uniform size in the short-side direction is formed as shown inFIG. 12C.

The energy period of the standing wave becomes about the wavelength ofthe rectangular laser beam. Therefore, the short-side directional sizeof the crystal grains to be formed becomes the interval of nodes orloops of the standing wave, i.e., about half the wavelength of therectangular laser beam. Therefore, the desired crystal grain size in theshort-side direction can be acquired by selecting the wavelength of therectangular laser beam to be used in irradiation.

Since the energy of the rectangular laser beam in the long-sidedirection is constant as described above referring to FIG. 6B, crystalnucleuses are produced at random positions in the long-side direction,thus forming crystal grains grown to random sizes in the long-sidedirection. Typically, the size of the crystal grains grown in thelong-side direction becomes several hundred nanometers or so. The use ofthe wavelength of several hundred nanometers or so can make the sizes ofthe crystal grains in the long-side direction and the short-sidedirection approximately equal to each other. It is therefore preferableto select the wavelength of the rectangular laser beam such that thecrystal grain size becomes about the long-side directional crystal grainsize of polycrystalline or monocrystalline silicon to be formed.Accordingly, the crystal grain size as shown in FIG. 13 can be acquired.

Further, according to the second embodiment, while transferring thesubstrate 1, the rectangular laser beam is introduced to the amorphoussilicon film with the incident angle of the rectangular laser beam tothe amorphous silicon film being adjusted. Thereby, the short-sidedirectional crystal grain size can be acquired according to the incidentangle. That is, the short-side directional crystal grain size can beadjusted by adjusting the incident angle. This will be explained below.

When the incident angle θ is increased in the transfer direction of thesubstrate 1 as shown in FIG. 14A, an interval X of nodes or loops of thestanding wave increases as indicated by an equation 1 where λ is thewavelength of the laser beam.

$\begin{matrix}{x = \frac{\lambda}{1 - {\sin\;\theta}}} & \left\lbrack {{Eq}.\mspace{14mu} 1} \right\rbrack\end{matrix}$

When the incident angle θ is increased in the opposite direction to thetransfer direction of the substrate 1 as shown in FIG. 14B, the intervalX of nodes or loops of the standing wave decreases as indicated by anequation 2 where λ is the wavelength of the laser beam. The relevantdescription is given in Non-patent Document 1.

$\begin{matrix}{x = \frac{\lambda}{1 + {\sin\;\theta}}} & \left\lbrack {{Eq}.\mspace{14mu} 2} \right\rbrack\end{matrix}$

Therefore, adjusting the incident angle of the rectangular laser beamchanges the period of the standing wave, so that polycrystalline ormonocrystalline silicon comprising crystal grains with the same size asthe energy period of the standing wave in the short-side direction canbe formed. In this manner, the size of crystal grains can be adjusted byadjusting the incident angle of the rectangular laser beam.

To adjust the incident angle of the rectangular laser beam, the opticalsystem side or the substrate side can be tilted. In a case of tiltingthe optical system, for example, with the optical system beingintegrally constructed, the entire optical system is tilted by a tiltingdevice. In a case of tilting the substrate side, the transfer table fortransferring the substrate 1 is tilted by a tilting device. Thosetilting devices may be any adequate publicly known device. The tiltingdevice that tilts the optical system or the transfer table constitutesincident angle adjusting means.

According to the second embodiment, the wavelength of the standing waveto be generated or the short-side directional crystal grain size can beadjusted by adjusting the angle at which the rectangular laser beam isintroduced to the amorphous silicon film, instead of selecting thewavelength of a rectangular laser beam or in addition to the selectionof the wavelength of a rectangular laser beam.

The size of crystal grains to be formed can also be adjusted by changingthe energy density of the rectangular laser beam. FIG. 15 shows crystalgrains in polycrystalline or monocrystalline silicon acquired byirradiating a rectangular beam with a wavelength of 1 μm and an electricfield directed in the short-side direction onto an amorphous siliconfilm at an incident angle of 10 degrees to the substrate transferdirection at an energy density of 450 to 500 mJ/cm². FIG. 16 showscrystal grains in polycrystalline or monocrystalline silicon acquired byirradiating a rectangular beam with a wavelength of 1 μm and an electricfield directed in the short-side direction onto an amorphous siliconfilm at an incident angle of 10 degrees to the substrate transferdirection at an energy density greater than 500 mJ/cm². The crystalgrain size in the short-side direction is about 1.0 μm in FIG. 15 whilethe crystal grain size in the short-side direction is about 1.5 μm inFIG. 16. As apparent from the experimental results, as the energydensity is increased, crystal grains with a size greater than the energyperiod of the standing wave are acquired.

Third Embodiment

A third embodiment of the present invention will be described next.

FIG. 17 shows the configuration of a laser annealing device according tothe third embodiment which forms polycrystalline or monocrystallinesilicon by irradiating an amorphous silicon film with a rectangularlaser beam whose cross section perpendicular to the advancing directionis a rectangle. The laser annealing device includes a pair of laseroscillators 21, 22, polarizers 24, 25 provided in association with thelaser oscillators 21, 22, a reflecting mirror 27 which reflects a laserbeam from the laser oscillator 21, and a beam splitter 28 which combineslaser beams from the two laser oscillators 21, 22. The combined beamfrom the beam splitter 28 is introduced to an optical system similar toor same as that of the first embodiment shown in FIGS. 4 and 5,generating a rectangular laser beam. This rectangular laser beam isintroduced to an amorphous silicon film on the substrate 1. FIG. 17shows only the long-side optical system 2 corresponding to FIG. 4 asindicated by a broken line (the polarizer 5 in FIG. 4 not used); theshort-side optical system 4 is the same as the one shown in FIG. 5 andis thus omitted. The polarizers 24, 25 constitute polarization meanswhich may be constituted by other adequate components. The long-sideoptical system 2 and the short-side optical system 4 used in the thirdembodiment constitute rectangular laser beam generating means which maybe constituted by other adequate components. The beam splitter 28 andthe reflecting mirror 27 constitute beam combining means which may beconstituted by other adequate components.

According to the third embodiment, the polarizers 24, 25 linearlypolarize the laser beams from the laser oscillators 21, 22,respectively. The polarization direction of the polarizer 24 is thelong-side direction, while the polarization direction of the polarizer25 is the short-side direction.

The laser annealing device according to the third embodiment further hasa pulse controller 29 which controls the laser oscillators 21, 22 suchthat the timings of laser pulses output from the laser oscillators 21,22 are different from each other. Therefore, the polarization directionof the laser beam combined by the beam splitter 28 is alternatelychanged between the long-side direction and the short-side direction.

The laser annealing device further has a transfer device which transfersthe substrate 1 in the short-side direction at a predetermined speed asin the first embodiment.

The entire amorphous silicon film is irradiated with a rectangular laserbeam by transferring the substrate 1 in the short-side direction whileintroducing the rectangular laser beam whose electric field direction isalternately changed to the amorphous silicon film on the substrate 1.

The long-side directional energy distribution at locations on thesubstrate 1 at which the rectangular laser beam with an electric fielddirection directed in the long-side direction is irradiated is the sameas the one shown in FIG. 9A, and the short-side directional energydistribution at locations on the substrate 1 at which the rectangularlaser beam with an electric field direction directed in the short-sidedirection is irradiated is the same as the one shown in FIG. 12A.Therefore, temperature distributions corresponding to the energydistributions in FIGS. 9A and 12A are respectively produced in thelong-side direction and the short-side direction of molten silicon.Therefore, nucleuses of crystal grains are generated at locations whichare cooled to the critical temperature of nucleus generation in thesolidification process of molten silicon. The nucleus generatedlocations are positions of troughs of the periodic energy distributionsin FIGS. 9A and 12A. Those crystal nucleuses grow in the long-sidedirection and the short-side direction to the higher-temperatureportions. The locations at each of which nucleuses collide with eachother to stop the growth are crystal grain boundaries. Consequently,polycrystalline or monocrystalline silicon comprising crystals withuniform sizes in the long-side direction and the short-side direction isformed.

Effects similar to or the same as those mentioned above are alsoobtained by generating a rectangular laser beam using a circularlypolarized laser beam instead of a combined laser beam whose electricfield direction is alternately changed between the long-side directionand the short-side direction.

In the third embodiment, the crystal grain size may also be adjusted bychanging the energy density of the rectangular laser beam.

Fourth Embodiment

A fourth embodiment of the present invention will be described next.

A laser annealing device according to the fourth embodiment is similarto or the same as the laser annealing device of the third embodimentshown in FIG. 17.

However, in the fourth embodiment, the pulse controller 29 may notcontrol the laser oscillators 21, 22 so as to shift the timings of thelaser pulses output from the laser oscillators 21, 22 from each other.That is, while the pulse controller 29 controls the timings of the laserpulses output from the laser oscillators 21, 22, the laser pulses outputfrom the laser oscillators 21, 22 may overlap each other. The laseroscillators 21, 22 are constructed to output linearly polarized lights,so that the polarizers 24, 25 in FIG. 17 can be omitted. For example,the laser oscillators 21, 22 themselves may output linearly polarizedlights; otherwise, the polarizers 24, 25 in FIG. 17 are respectivelyprovided in the laser oscillators 21, 22.

According to the fourth embodiment, the laser annealing device is setsuch that the polarization direction of the laser beam from the firstlaser oscillator 21 and the polarization direction of the laser beamfrom the second laser oscillator 22 are perpendicular to each other.

Therefore, standing waves are generated on the amorphous silicon film ofthe substrate 1 in polarization directions perpendicular to each other,and the periodic energy of the standing wave similar to the one shown inFIG. 9A is produced, thereby producing a temperature gradientcorresponding to this energy.

As a result, crystal nucleuses are produced at the positions of troughsof the periodic energy, the crystal nucleuses grow in a direction of ahigher-temperature portion, and the locations at which the crystalnucleuses collide with each other become crystal grain boundaries as inthe third embodiment. Therefore, crystal nucleuses produced at periodicpositions are grown by the influence of the same temperature gradientproduced in the directions perpendicular to each other, so that apolycrystalline or monocrystalline semiconductor film comprising crystalgrains with uniform sizes in the directions perpendicular to each othercan be formed. As a result, the crystal grain size becomes uniformbetween the long-side direction and the short-side direction.

In the fourth embodiment, polarizers, such as a half-wavelength plate,which adjust the polarization direction, may be provided between thebeam splitter 28 and the long-side optical system 2 and the short-sideoptical system 4. Such a polarizer can change, for example, the statewhere the polarization direction of the laser beam is directed in thelong-side direction and the short-side direction as shown in FIG. 18A tothe state where the polarization direction of the laser beam is titledby 45 degrees from the long-side direction and the short-side directionas shown in FIG. 18B.

Fifth Embodiment

A fifth embodiment of the present invention will be described next.

FIG. 19 shows the configuration of a laser annealing device according tothe fifth embodiment of the present invention which formspolycrystalline or monocrystalline silicon by irradiating an amorphoussilicon film with a rectangular laser beam whose cross sectionperpendicular to the advancing direction is a rectangle.

The laser annealing device has the laser oscillator 21 similar to or thesame as that of the fourth embodiment, a quarter-wavelength plate 31which circularly polarizes a linearly polarized laser beam from thelaser oscillator 21, and the aforementioned long-side optical system 2and short-side optical system 4 (the polarizer 5 in FIGS. 4 and 5 notused) which turn the laser beam from the quarter-wavelength plate 31 toa rectangular laser beam. In FIG. 19, the short-side optical system 4 isomitted for the sake of simplicity.

The quarter-wavelength plate 31 constitutes circular polarization meanswhich may be constituted by another adequate component. The laseroscillator 21, the circular polarization means, the long-side opticalsystem 2 and the short-side optical system 4 constitute circularlypolarized beam generating means which may be constituted by otheradequate components.

The laser annealing device with such a configuration causes a circularlypolarized laser beam to be introduced onto an amorphous silicon film onthe substrate 1.

Accordingly, a standing wave produced on the amorphous silicon filmtakes a circular motion on a plane perpendicular to the advancingdirection of light. This makes the periodic energy of the standing waveor a temperature gradient corresponding thereto to be produced uniformlyin every direction on the surface of the semiconductor film.

When laser annealing is performed on an amorphous semiconductor film bythis method and device, therefore, nucleuses are generated at troughs ofthe periodic energy, so that the individual nucleuses grow in thedirections to higher-temperature portions and those portions where thenucleuses collide with one another become crystal grain boundaries. Asnucleuses generated at periodic positions are grown by the influence ofthe periodic temperature gradients uniformly produced in everydirection, therefore, it is possible to form a polycrystalline ormonocrystalline semiconductor film comprising crystal grains with auniform size in every direction. As a result, the crystal grain sizesbecome uniform between the long-side direction and the short-sidedirection.

Sixth Embodiment

A sixth embodiment of the present invention will be described next.

A laser annealing device according to the sixth embodiment is similar toor the same as the laser annealing device of the fifth embodiment shownin FIG. 19 except for the quarter-wavelength plate 31.

According to the sixth embodiment, the laser annealing device has apolarization canceling plate which turns a linearly polarized laser beamfrom the laser oscillator 21 to unpolarized light, instead of thequarter-wavelength plate 31 in FIG. 19. The polarization canceling plateconstitutes unpolarization means which turns linearly polarized light tounpolarized light but which may be constituted by another adequatecomponent.

The polarization canceling plate can turn the linearly polarized laserbeam from the laser oscillator 21 to an unpolarized laser beam. Theunpolarized laser beam from the polarization canceling plate passesthrough the long-side optical system 2 and the short-side optical system4 to be a rectangular laser beam. Therefore, the unpolarized rectangularlaser beam is introduced to the amorphous silicon film on the substrate1.

As a linearly polarized laser beam is introduced to the substrate 1after being turned to unpolarized light according to the sixthembodiment, a standing wave is not produced on the surface of theamorphous silicon film on the substrate 1.

Therefore, crystal grains are generated at random positions, and, whatis more, the crystal grains grow in a random direction, therebysuppressing an increase in the sizes of crystal grains only in aspecific direction. As a result, the sizes of the crystal grains of thesemiconductor film are generally made uniform, obtaining a uniformcrystal grain size between the long-side direction and the short-sidedirection.

Other Embodiments

The present invention is not limited to the above-described embodiments,and can of course be modified in various manners without departing fromthe scope and spirit of the invention. For example, the crystal grainsize may be adjusted by adjusting the short-side directional shape of arectangular laser beam. The adjustment of the short-side directionalshape may be carried out by adjusting the length of the short side ofthe rectangular laser beam. This can make the energy gradient in theshort-side direction smaller, thereby suppressing the growth of crystalgrains in the short-side direction. The invention can be adapted notonly to an amorphous silicon film but also to other amorphoussemiconductor films.

Further, while the above-described embodiments are for a case where apolycrystalline or monocrystalline semiconductor film is modified byirradiating a rectangular laser beam to an amorphous semiconductor film,the quality of a polycrystalline or monocrystalline semiconductor filmmay be improved by irradiating a rectangular laser beam on thepolycrystalline or monocrystalline semiconductor film instead of anamorphous semiconductor film. This allows crystals to grow in one orboth of the long-side direction and the short-side direction by theinfluence of the periodic temperature gradient. Thereby, the quality ofthe polycrystalline or monocrystalline semiconductor film is improved soas to make uniform the size of crystal grains in one or both of thelong-side direction and the short-side direction. In this case, thepresent invention can be adapted to an improvement on the quality of apolycrystalline or monocrystalline silicon film, or otherpolycrystalline or monocrystalline semiconductor films. In the case ofthe sixth embodiment, however, an increase in the size of crystal grainsonly in a specific direction is suppressed to improve the quality of thepolycrystalline or monocrystalline semiconductor film.

1. A laser annealing method for executing laser annealing by irradiatinga semiconductor film formed on a surface of a substrate with a laserbeam, the method including: generating a linearly polarized rectangularlaser beam whose cross section perpendicular to an advancing directionis a rectangle with an electric field directed toward a long-sidedirection of the rectangle or an elliptically polarized rectangularlaser beam having a major axis directed toward a long-side direction;causing the polarized rectangular laser beam to be introduced to thesurface of the substrate; and setting a wavelength of the polarizedrectangular laser beam to a length which is about a desired size of acrystal grain in a standing wave direction.
 2. The laser annealingmethod according to claim 1, wherein an energy density of the polarizedrectangular laser beam or a short-side width of the polarizedrectangular laser beam is adjusted to adjust a size of a crystal grainof a polycrystalline or monocrystalline semiconductor film to be formed.3. A laser annealing method for executing laser annealing by irradiatinga semiconductor film formed on a surface of a substrate with a laserbeam, the method including: generating a linearly polarized rectangularlaser beam whose cross section perpendicular to an advancing directionis a rectangle with an electric field directed toward a short-sidedirection of the rectangle or an elliptically polarized rectangularlaser beam having a major axis directed toward a short-side direction;and causing the polarized rectangular laser beam to be introduced to thesubstrate.
 4. The laser annealing method according to claim 3, includinga step of irradiating a surface of the semiconductor film on thesubstrate with the polarized rectangular laser beam while transferringthe substrate in a direction perpendicular to a long side of thepolarized rectangular laser beam, wherein an incident angle of thepolarized rectangular laser beam to the semiconductor film is adjustedsuch that the incident angle is increased in a transfer direction of thesubstrate or a direction opposite to the transfer direction of thesubstrate.
 5. The laser annealing method according to claim 3, whereinan energy density of the polarized rectangular laser beam or ashort-side width of the polarized rectangular laser beam is adjusted toadjust a size of a crystal grain of a polycrystalline or monocrystallinesemiconductor film to be formed.
 6. The laser annealing method accordingto claim 4, wherein an energy density of the polarized rectangular laserbeam or a short-side width of the polarized rectangular laser beam isadjusted to adjust a size of a crystal grain of a polycrystalline ormonocrystalline semiconductor film to be formed.
 7. A laser annealingmethod for executing laser annealing by irradiating a semiconductor filmformed on a surface of a substrate with a laser beam, the methodincluding: generating a polarized rectangular laser beam whose crosssection perpendicular to an advancing direction is a rectangle with anelectric field whose direction is alternately changed to a long-sidedirection and a short-side direction of the rectangle; and causing thepolarized rectangular laser beam to be introduced to the surface of thesubstrate.
 8. The laser annealing method according to claim 7, whereinan energy density of the polarized rectangular laser beam or ashort-side width of the polarized rectangular laser beam is adjusted toadjust a size of a crystal grain of a polycrystalline or monocrystallinesemiconductor film to be formed.
 9. A laser annealing method forexecuting laser annealing by irradiating a semiconductor film formed ona surface of a substrate with a laser beam, the method including:generating a first laser beam linearly polarized; generating a secondlaser beam linearly polarized; combining the first laser beam and thesecond laser beam such that a polarization direction of the first laserbeam and a polarization direction of the second laser beam becomeperpendicular to each other; turning the combined laser beam to apolarized rectangular laser beam whose cross section perpendicular to anadvancing direction is a rectangle; and causing the polarizedrectangular laser beam to be introduced to the surface of the substrate.10. A laser annealing method for executing laser annealing byirradiating a semiconductor film formed on a surface of a substrate witha laser beam, the method including: generating a circularly polarizedrectangular laser beam whose cross section perpendicular to an advancingdirection is a rectangle; and causing the polarized rectangular laserbeam to be introduced to the surface of the substrate.
 11. A laserannealing method for executing laser annealing by irradiating asemiconductor film formed on a surface of a substrate with a laser beam,the method including: generating a linearly polarized laser beam;turning the linearly polarized laser beam to an unpolarized laser beam;turning the unpolarized laser beam to a rectangular laser beam whosecross section perpendicular to an advancing direction is a rectangle;and causing the rectangular laser beam to be introduced to the surfaceof the substrate.